2025年高压小功率三极管 MFV13001

高压小功率三极管 MFV1300101 基本参数 小功率高速高压开关三极管 MJE13001 典型应用 荧光灯电子镇流器 手机充电器等开关特点 主要的参数 通过万用表验证上面 TO 92 封装的形式 B 对于 C E 的二极管的导通电压 0 662V 下面是从 小功率荧光灯拆解分析 中拆卸下来的两支 13002 晶体管

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01基本参数


小功率高速高压开关三极管 MJE13001 ,典型应用:

  • 荧光灯电子镇流器
  • 手机充电器等开关特点。

主要的参数:

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  • 通过万用表验证上面TO-92封装的形式。B对于C,E的二极管的导通电压:0.662V 。

下面是从 小功率荧光灯拆解分析 中拆卸下来的两支 13002晶体管。

▲ 在小型荧光灯泡里拆卸下来的13002

▲ 在小型荧光灯泡里拆卸下来的13002

▲ 测量三极管的基本参数

▲ 测量三极管的基本参数

 

02测量基本耐压参数


▲ 测量MJE13001的基本击穿电压

▲ 测量MJE13001的基本击穿电压

使用 高压产生平台 测量MJE13001的基本耐压参数。

1.Vcbo

▲ Vcbo电压击穿电流

▲ Vcbo电压击穿电流

vin=[440.62,447.58,454.47,461.54,468.36,475.95,482.88,489.88,496.73,503.78,510.64,517.51,524.53,532.08,538.99,545.90,552.88,559.70,566.72,573.61,580.44,587.92,594.99,601.91,608.79,615.81,622.68,629.63,636.53,643.99,650.86,657.83,664.64,671.68,678.51,685.34,692.24,699.23,706.73,713.58,720.58,727.48,734.46,741.22,745.76,748.19,750.69,753.13,755.25,757.27,759.34,761.35,763.29,765.31,767.42,769.41,771.27,773.04,774.79,776.62,778.03,779.59,781.11,782.43,783.78] iout=[0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.01,0.27,6.15,18.00,31.38,42.91,55.53,68.74,81.69,95.04,108.20,121.18,135.64,148.37,160.46,172.07,183.83,195.26,206.65,217.86,230.06,241.57,252.75] 

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2.Vceo

▲ Vceo电压与电流

▲ Vceo电压与电流

讯享网vin=[439.87,446.84,453.72,460.80,467.69,475.31,482.13,489.20,496.06,503.05,509.97,516.79,523.81,531.30,538.18,545.08,522.64,522.57,522.62,522.71,522.87,523.15,523.36,523.73,524.05,524.26,524.72,525.07,525.44] iout=[0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,0.00,-0.00,0.01,0.00,76.46,94.61,113.05,130.94,148.31,165.74,180.65,194.24,207.45,220.37,232.67,245.14,257.21] 

3.Vceb=0

▲ 将eb短接测量Vce与Ice之间的关系

▲ 将eb短接测量Vce与Ice之间的关系

对照一下,可以看到基本上Vceb=0与Vcbo基本是一样的。

4.测量SOT-23封装的参数

▲ 测量SOT-23封装的耐压参数

▲ 测量SOT-23封装的耐压参数

(1) Vcbo

需要说明的是,在开始的电流突升是由于使用洗板水进行清理的过程中,挥发过程,各个电极之间的阻抗在动态变化。

▲ Vcbo电压与电流曲线

▲ Vcbo电压与电流曲线

(2) Vceo

▲ Vceo电压与电流

▲ Vceo电压与电流

(3) Vceb=0

▲ Vceb=0电压电流

▲ Vceb=0电压电流

#!/usr/local/bin/python # -*- coding: gbk -*- #============================================================ # TEST2.PY -- by Dr. ZhuoQing 2020-09-19 # # Note: #============================================================ from headm import * from tsmodule.tsvisa import * from tsmodule.tsstm32 import * dp1308open() dm3068open() setv = linspace(0.8, 2, 100) idim = [] vdim = [] for v in setv: dp1308p6v(v) time.sleep(0.5) meter = meterval() vout = dm3068vdc() printff(v, meter[0]*988, vout*1000) idim.append(vout*1000) vdim.append(meter[0]*988) tspsave("measure", vin=vdim, iout=idim) if vout*1000 > 250: break dp1308p6v(0) plt.plot(vdim, idim) plt.xlabel("输入电压(V)") plt.ylabel("电流(uA)") plt.grid(True) plt.tight_layout() plt.show() #------------------------------------------------------------ # END OF FILE : TEST2.PY #============================================================ 

5.分析

对比前面对于SOT23封装和TO-92封装的数据,可以看到SOT23封装的耐压会更高一些。

 

03电流放大倍数


测量电路如下图所示。通过调节电位器P1器使得Uce达到2.5V左右。通过测量Ubr, Uce来计算三极管的电流放大倍数。

▲ 测试电路

▲ 测试电路

β = I c I b = + 5 − U c e R c U b r R b = R b R c × 5 − U c e U b r \beta = { {I_c } \over {I_b }} = { { { { + 5 - U_{ce} } \over {R_c }}} \over { { {U_{br} } \over {R_b }}}} = { {R_b } \over {R_c }} \times { {5 - U_{ce} } \over {U_{br} }} β=IbIc=RbUbrRc+5Uce=RcRb×Ubr5Uce

  • 测量TO-92封装组数据为:
Ubr Uce beta
0.618 2.312 19.54
0.381 3.354 23.23
1.005 0.751 19.025
  • 测量SOT-23封装13001数据
Ubr Uce beta
0.6399 2.4851 17.73

从上面测量的结果来看,13001 的电流放大倍数非常低。作为对比。使用一颗8050 NPN三极管替代13001,来测量对应的电流放大倍数。具体数据如下:

Ubr Uce beta
0.703 2.586 154.5

将8050的C,E进行交换,测量得到的数值:

Ubr Uce beta
0.6178 2.710 16.68

 

※ 结论


通过实际测量MJE13001高压高频开关三极管的基本参数,可以验证它具有以下特点:

  • 它的耐压很高,Vcbo达到了700V以上;
  • 它的电流放大倍数比较低:基本上在20左右。

 
■ 相关文献链接:

  • MJE13001
  • 高压测试平台:高压包产生高电压基本测试参数
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